Heat Sink Material, Manufacturing Method For The Same, And Semiconductor Laser Device

ABSTRACT

Provided are a heat sink material made of an alloy or a composite material including two or more types of elements which has an end surface that makes possible formation of an edge portion on which at least a laser element is mounted, a manufacturing method for the same, and a semiconductor laser device including the heat sink material. A heat sink material ( 10 ) is made of an alloy or a composite material including two or more types of elements, and provided with a main surface having a relatively large area and a secondary surface having a relatively small area which crosses the main surface, and the secondary surface includes a surface on which a discharging process has been carried out using a discharge wire ( 200 ) that is placed approximately parallel to the main surface. The manufacturing method for the heat sink material ( 10 ) is provided with the steps of placing the discharge wire ( 200 ) on a material ( 100, 50 ) to be approximately parallel to the main surface, and carrying out the discharging process on the material ( 100, 50 ) using the discharge wire ( 200 ) placed as described above.

TECHNICAL FIELD

This invention generally relates to a heat sink material, amanufacturing method for the same, and a semiconductor laser device, andin particular, to a heat sink material of a semiconductor laser element(laser diode (LD)) for a bar laser, a manufacturing method for the same,and a semiconductor laser device having the semiconductor laser elementfor a bar laser and the heat sink material.

BACKGROUND ART

A heat sink having a desired and extremely high surface precision to theedge portions and a method for processing the same, which allows forstably gaining such a heat sink, are proposed in, for example, JapaneseUnexamined Patent Publication 2000-22284 (Patent Document 1). Thismethod for processing a heat sink is a method for processing a heat sinkthat forms a semiconductor laser element, and is characterized by havingthe step of forming a number of long members in rod form by cutting amember in plate form, where a first mirror surface is formed on at leastone surface, the step of forming a second mirror surface by carrying outa cutting process on the upper surface of the number of members in rodform, which are secured to a jig in order to be approximately parallelto each other in a state where the first mirror surface standsapproximately vertically so that an edge portion is formed between thefirst mirror surface and the second mirror surface, and the step ofgaining a number of heat sinks by cutting the members in rod form. Inaddition, this method for processing a heat sink is characterized byhaving the step of processing one surface of a member in plate form intoa mirror surface, the step of forming edge portions between the mirrorsurface and trenches that are created by carrying out a dischargingprocess or a laser process on the mirror surface of the member in plateform, and the step of gaining a number of heat sinks by cutting themember in plate form along the trenches. A copper based material havingexcellent thermal conductivity is used as the material of this type ofheat sink. Patent Document 1: Japanese Unexamined Patent Publication2000-22284

DISCLOSURE OF THE INVENTION

Problem to be Solved by the Invention

Chips of a bar laser element for processing or for industrial use arelarge so as to be as long as approximately 10 mm, and the basic materialthereof is formed of a gallium arsenic compound semiconductor material.Therefore, the properties of heat sinks for a bar laser element arerequired to have a coefficient of linear expansion, which isapproximately the same as that of the gallium arsenic compoundsemiconductor material in addition to a high thermal conductivity. Asfor the materials which satisfy such required properties,copper—tungsten alloys, copper—diamond composite materials and the like,of which the average coefficient of linear expansion is no less than3.0×10⁻⁶/K and no greater than 9.0×10⁻⁶/K at a temperature ranging fromroom temperature to 400° C., and the thermal conductivity is no lessthan 100 W/m·K, are regarded as promising.

Meanwhile, heat sinks for a laser element are required to have a smallradius of curvature (R) at the edge portions, small chipped portions, ifany, in the edge portions and no burrs in the edge portions in order torelease heat from the laser emitting layer without fail. In the casewhere the radius of curvature at the edge portions is great, heat isprevented from being released to the heat sink from the laser elementwhen the laser element is mounted on the heat sink in such a manner thatthe end surface of the laser emitting layer matches an edge portion ofthe heat sink. In the same manner, in the case where an edge portion hasa large chipped portion, heat is prevented from being released to theheat sink from the laser element. In the case where there is a burr atan edge portion, a gap exists between the laser element and the heatsink, and therefore, heat is prevented from being released to the heatsink from the laser element.

In accordance with the processing method that is disclosed in the abovedescribed gazette, edge portions having a small radius of curvature andsmall chipped portions can be gained, and burrs can be prevented frombeing created at the edge portions in the case where a heat sink isprocessed from a copper based material of which the main component iscopper. It is difficult, however, to gain desired edge portions inaccordance with the above described processing method from a compositematerial such as a copper—tungsten alloy, a copper—diamond compositematerial or the like where materials having different processability aremixed. Therefore, to gain a desired edge portion, it is necessary tocarry out post processing such as a cutting process in order to adjustthe form of the end surface after the cutting step for the formation ofan edge portion has been carried out. In addition, a problem arises witha heat sink, which has an end surface that has been gained only in thecutting process, where a laser element cannot be mounted on the heatsink due to the existence of a burr or a protrusion on the end surface.

As for a composite material where copper and a material that is harderthan copper are combined, for example, it is difficult to find processconditions which can be applied to both copper and the hard materialthat form this composite material even in the case where processconditions which are appropriate for copper and the hard material thatform this composite material, respectively, are found. There areproblems, for example, where copper creates a burr at an edge portion inaccordance with a cutting process, and the hard material chips in anedge portion (a chipped portion is created). In this case, it isdifficult to prevent both a burr and a chipped portion from beingcreated in an edge portion.

Therefore, an object of this invention is to provide a heat sinkmaterial which is made of an alloy or a composite material including twoor more types of elements, and has an end surface that makes possibleformation of an edge portion on which at least a laser element ismounted, a manufacturing method for the same, and a semiconductor laserdevice having such a heat sink material.

Means for Solving the Problems

The heat sink material according to this invention is made of an alloyor a composite material including two or more types of elements andprovided with a main surface having a relatively large area and asecondary surface having a relatively small area which crosses the mainsurface, wherein the secondary surface includes a surface on which adischarging process has been carried out using a discharge wire that isplaced approximately parallel to the main surface.

In the heat sink material according to this invention, the secondarysurface having a relatively small area includes a surface on which thedischarging process has been carried out using the discharge wire thathas been placed approximately parallel to the main surface, andtherefore, a further discharging process can be carried out on thesecondary surface using the discharge wire that has been placedapproximately parallel to the main surface, and thereby, an edge (edgeportion) having a small radius of curvature and small chipped portionscan be gained, and thus, a burr can be prevented from being created inthe edge portion. In other words, the secondary surface of the heat sinkmaterial according to the present invention has an end surface thatmakes formation of an edge portion on which at least a laser element ismounted possible.

In the heat sink material according to this invention, it is preferablefor an approximate radius of curvature at an edge where the main surfaceand the secondary surface cross to be no greater than 30 μm.

In this case, when a laser element is mounted on the heat sink in such amanner that the end surface of an laser emitting layer is aligned withthe edge (edge portion) of the heat sink material, heat can beeffectively released from the portion directly beneath the laseremitting layer (active layer) to the heat sink material.

In addition, on the secondary surface of the heat sink materialaccording to this invention, it is preferable for the number of chippedportions having a width of no greater than 30 μm and a length of nogreater than 50 μm, which exist per 1 mm on a length of the edge portionto be no greater than 10.

In this case, when a laser element is mounted on the heat sink in such amanner that the end surface of the laser emitting layer is aligned withthe edge (edge portion) of the heat sink material, heat can beeffectively released from the portion directly beneath the laseremitting layer (active layer) to the heat sink material.

Furthermore, it is preferable for the alloy or composite material thatforms the heat sink material according to this invention to have anaverage coefficient of linear expansion of no less than 3.0×10⁻⁶/K andno greater than 9.0×10⁻⁶/K at a temperature ranging from roomtemperature to 400° C., and a thermal conductivity of no less than 100W/m·K.

In this case, thermal stress can be prevented from being caused when alaser element is heated and joined to the heat sink material, and heatthat is emitted when light is emitted from the laser element can beeffectively conveyed to the heat sink material.

It is preferable for a material that forms the heat sink materialaccording to this invention to be a material including two types ofmetals or a material including a metal and hard particles.

In particular, it is preferable for the material that forms the heatsink material according to this invention to be one type of materialselected from the group consisting of an alloy including copper andtungsten, a composite material including diamond particles and copper,an alloy including copper and molybdenum, and a composite materialincluding silicon carbide and aluminum.

In addition, it is preferable for the heat sink material according tothis invention to have a metal film formed at least on the main surface.

The semiconductor laser device according to this invention is providedwith: the heat sink material having at least any of the above describedcharacteristics; and a semiconductor laser element chip that is securedto the top of the main surface of this heat sink material, wherein anend surface of this semiconductor laser element chip is positioned onthe main surface at a distance of no greater than 10 μm from the edgeportion where the main surface and the secondary surface of the heatsink material cross.

The manufacturing method for a heat sink material according to thisinvention is provided with the steps of: placing a discharge wire, on amaterial made of an alloy or a composite material including two or moretypes of elements and having a main surface which has a relatively largearea and a secondary surface which has a relatively small area andcrosses the main surface, to be approximately parallel to the mainsurface; and carrying out a discharging process on the material usingthe discharge wire placed as describe above.

According to the manufacturing method for the heat sink material of thisinvention, the discharging process is carried out on the secondarysurface having a relatively small area using the discharge wire that hasbeen placed approximately parallel to the main surface, and therefore, afurther discharging process can be carried out on the secondary surfaceusing the discharge wire that has been placed approximately parallel tothe main surface, and thereby, an edge portion having a small radius ofcurvature and small chipped portions can be gained, and thus, a burr canbe prevented from being created in the edge portion. In other words, thesecondary surface of the heat sink material that has been processedaccording to the manufacturing method of the present invention has anend surface that makes formation of the edge portion on which at least alaser element is mounted possible.

In the manufacturing method for the heat sink material according to thisinvention, it is preferable for the discharging process to include thesteps of cutting the material, roughly finishing the cut surface, andfinely finishing the cut surface.

In this case, the discharging process is carried out step by step on thesecondary surface, and thereby, an edge portion having a small radius ofcurvature and small chipped portions can be gained, and a burr can beprevented from being created in the edge portion.

Effects of the Invention

As described above, according to this invention, a heat sink materialmade of an alloy or a composite material including two or more types ofelements which is provided with an end surface that makes formation ofan edge portion on which at least a laser element is mounted possiblecan be gained, and a further discharging process can be carried out onthis heat sink material, so that an edge portion having a small radiusof curvature and small chipped portions is gained, and a burr can beprevented from being created in the edge portion, and therefore, heatrelease from the laser element to the heat sink material can beimproved.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram showing the sequence steps in a manufacturing methodfor a heat sink material according to an example of this invention;

FIG. 2 is a plan diagram showing a jig which is used in a dischargingprocess for a heat sink material according to an example of thisinvention;

FIG. 3 is a cross sectional diagram schematically showing a crosssection of a heat sink gained in accordance with an example of thisinvention;

FIG. 4 is a diagram showing the sequence of steps in a manufacturingmethod for a heat sink material according to a comparative example ofthis invention;

FIG. 5 is a diagram showing the sequence of steps in a manufacturingmethod for a heat sink material according to another comparative exampleof this invention; and

FIG. 6 is a diagram schematically showing the configuration ofsemiconductor laser devices formed using heat sink materials gainedaccording to examples and comparative examples of this invention.

EXPLANATION OF THE SYMBOLS

1: heat sink; 2: semiconductor laser element chip; 10: heat sinkmaterial; 11: nickel plating layer or nickel vapor deposition layer; 12:platinum film; 50, 100: material; 200: discharge wire

BEST MODE FOR CARRYING OUT THE INVENTION

A heat sink material according to one embodiment of this invention ismade of an alloy or a composite material including two or more types ofelements, and is gained by preparing a material with a main surfacehaving a relatively large area and a secondary surface having arelatively small area which crosses this main surface, and carrying outa discharging process on at least the secondary surface using adischarge wire that is placed approximately parallel to the mainsurface.

It is preferable for the discharging process to be carried out in thedischarging process step in no less than three stages, the cutting stepusing a discharge wire processor, the step of roughly finishing the cutsurface, and the step of finely finishing the cut surface. In this case,it is preferable for the amount of offset in the discharging process tobe no greater than 100% of the diameter of the discharge wire in thestep of roughly finishing the cut surface and the step of finelyfinishing the cut surface, it is more preferable for it to be no greaterthan 50%, and it is more preferable for it to be no greater than 30%. Ifthe ratio of the amount of offset in the discharging process to thediameter of the discharge wire exceeds 100%, the load applied to theobject being processed in the discharging process becomes large, causingchipping or sagging in the edge portion of the heat sink material whichis the object being processed, and in addition, the amount cut from theobject being processed increases and the quantity of heat sink materialthat can be taken from the material is reduced, and thus, the cost ofmanufacture increases.

In the heat sink material according to one embodiment of the presentinvention, it is preferable for the approximate radius of curvature (R)at the edge where the main surface and the secondary surface cross to beno greater than 30 μm, and concretely, it is preferable for the radiusof curvature (R) of the portion sagging from the edge of at least onelong side on the two planes having a large area from among the planesthat form a rectangular parallelepiped to be no greater than 30 μm, itis more preferable for it to be no greater than 20 μm, and it is mostpreferable for it to be no greater than 10 μm. If the above describedradius of curvature exceeds 30 μm, when a laser element is mounted onthe heat sink in such a manner that the end surface of the laseremitting layer (active layer) is aligned with the edge (edge portion) ofthe heat sink material, heat release from the portion directly beneaththe active layer, which is a portion of the semiconductor laser elementthat is mounted on top of the main surface of the heat sink materialfrom which a laser is emitted, becomes insufficient, and the desiredlaser output cannot be gained. Here, the above described radius ofcurvature is at least no less than 1 μm. In order to carry out adischarging process in such a manner that the above described radius ofcurvature becomes less than 1 μm, it is necessary to reduce the outputin the discharging process and reduce the speed of processing, which isnot economical from the point of view of efficiency of processing, andthus not preferable.

In addition, in the heat sink material according to one embodiment ofthe present invention, it is preferable for the number of chippedportions (chipping) of which the width is no greater than 30 μm andlength is no greater than 50 μm, and which exist on the secondarysurface per 1 mm on the length of the edge to be no greater than 10. Itis more preferable for the width of the chipped portions to be nogreater than 15 μm and the length to be no greater than 30 μm, it ismore preferable for the width of the chipped portions to be no greaterthan 5 μm and the length to be no greater than 10 μm, and it is morepreferable for the number of the chipped portions to be no greater than5 per 1 mm on the length of the edge, and it is most preferable for itto be no greater than 1. If the width of the chipped portions exceeds 30μm, or the length of the chipped portions exceeds 50 μm, when a laserelement is mounted on the heat sink in such a manner that the endsurface of the laser emitting layer (active layer) is aligned with theedge (edge portion) of the heat sink material, heat release from theportion directly beneath the active layer, which is a portion of thesemiconductor laser element that is mounted on top of the main surfaceof the heat sink material from which a laser is emitted, becomesinsufficient, and the desired laser output cannot be gained. In the casewhere the number of chipped portions per 1 mm on the length of the edgeexceeds 10, heat release becomes insufficient directly beneath someportions from among the portions from which a laser is emitted and whichare aligned with a pitch of 100 μm on, for example, a laser elementhaving a length of 10 mm.

It is preferable for the average coefficient of linear expansion of thematerial that forms the heat sink material to be no lower than3.0×10⁻⁶/K and no higher than 9.0×10⁻⁶/K at a temperature ranging fromroom temperature to 400° C., it is more preferable for it to be no lowerthan 4.0×10⁻⁶/K and no higher than 8.0×10⁻⁶/K, and it is most preferablefor it to be no lower than 5.0×10⁻⁶/K and no higher than 7.5×10⁻⁶/K. Ifthe average coefficient of linear expansion is lower than 3.0×10⁻⁶/K orexceeds 9.0×10⁻⁶/K, the difference in the coefficient of thermalexpansion with a gallium arsenic compound semiconductor of which theaverage coefficient of linear expansion is 5.9×10⁻⁶/K and which formsthe base material of the semiconductor laser element becomes great, andtherefore, when a semiconductor laser element is heated and joined tothe top of the heat sink material, thermal stress is caused, making theperformance of the laser element unstable, and the operation life isshortened, and in some cases, the laser element is damaged.

It is preferable for the thermal conductivity of the material that formsthe heat sink material to be no less than 100 W/m·K, it is morepreferable for it to be no less than 150 W/m·K, and it is mostpreferable for it to be no less than 400 W/m·K. If the thermalconductivity is less than 100 W/m·K, heat that is emitted from the laserelement cannot be sufficiently released, and therefore, the desired highlaser output cannot be gained.

It is preferable for the material that forms the heat sink material tobe an alloy including copper and tungsten, a composite materialincluding diamond and copper, an alloy including copper and molybdenum,or a composite material including silicon carbide and aluminum.

In the case where an alloy including copper and tungsten is used as thematerial that forms the heat sink material, it is preferable for thematerial to include copper of no less than 5 mass %, it is morepreferable for the content of copper to be no less than 5 mass % and nogreater than 40 mass %, and it is most preferable for it to be no lessthan 10 mass % and no greater than 20 mass %. In the case where thecontent of copper is less than 5 mass %, the average coefficient oflinear expansion of the copper—tungsten alloy is smaller than theaverage coefficient of linear expansion, which is 5.9×10⁻⁶/K, of agallium—arsenic compound semiconductor that forms the base material ofthe semiconductor laser element, and therefore, when a semiconductorlaser element is heated and joined to the top of the heat sink material,thermal stress is caused, making it easy for the semiconductor laserelement to come off, and as a result, the lifetime of the laser elementand its reliability over a long period of time are negatively affected.

In the case where a composite material including diamond and copper isused as the material that forms the heat sink material, it is preferablefor the material to include Ib type diamond particles of which theparticle diameter are no less than 5 μm and no greater than 100 μm, itis more preferable for the particle diameter of the diamond particles tobe no less than 10 μm and no greater than 60 μm, and it is mostpreferable for it to be no less than 20 μm and no greater than 50 μm. Inthe case where the particle diameter is less than 5 μm, the thermalresistance becomes great due to an increase in the area of the interfacewith copper particles, and the thermal conductivity of the compositematerial is lowered. In the case where the particle diameter exceeds 100μm, the size of the chipped portions in the edge portion becomes great,and the cut end surface also becomes highly coarse when diamondparticles fall off during the processing of the heat sink material. Itis preferable for the content of copper to be no less than 19 mass % andno greater than 76 mass %, it is more preferable for it to be no lessthan 29 mass % and no greater than 66 mass %, and it is most preferablefor it to be no less than 38 mass % and no greater than 52 mass %. Inthe case where the content of copper is less than 19 mass %, the averagecoefficient of linear expansion of the composite material is smallerthan the average coefficient of linear expansion, which is 5.9×10⁻⁶/K,of a gallium—arsenic compound semiconductor that forms the base materialof the semiconductor laser element, and therefore, when a semiconductorlaser element is heated and joined to the top of the heat sink material,thermal stress is caused, making it easy for the semiconductor laserelement to come off, and as a result, the lifetime of the laser elementand its reliability over a long period of time are negatively affected.In addition, in the case where the content of copper exceeds 76 mass %,the average coefficient of linear expansion of the composite material isgreater than the average coefficient of linear expansion, which is5.9×10⁻⁶/K, of a gallium—arsenic compound semiconductor that forms thebase material of the semiconductor laser element, and therefore, when asemiconductor laser element is heated and joined to the top of the heatsink material, thermal stress is caused, making it easy for thesemiconductor laser element to come off, and as a result, the lifetimeof the laser element and its reliability over a long period of time arenegatively affected.

In the case where an alloy including copper and molybdenum is used asthe material that forms the heat sink material, it is preferable for thematerial to include copper of no less than 5 mass %, it is morepreferable for the content of copper to be no less than 5 mass % and nogreater than 60 mass %, and it is most preferable for it to be no lessthan 5 mass % and no greater than 35 mass %. In the case where thecontent of copper is less than 5 mass %, the average coefficient oflinear expansion of the copper—molybdenum alloy is smaller than theaverage coefficient of linear expansion, which is 5.9×10⁻⁶/K, of agallium—arsenic compound semiconductor that forms the base material ofthe semiconductor laser element, and therefore, when a semiconductorlaser element is heated and joined to the top of the heat sink material,thermal stress is caused, making it easy for the semiconductor laserelement to come off, and as a result, the lifetime of the laser elementand its reliability over a long period of time are negatively affected.

In the case where a composite material including silicon carbide andaluminum is used as the material that forms the heat sink material, itis preferable for the material to include aluminum of no greater than 70mass %. In the case where the content of aluminum exceeds 70 mass %, theaverage coefficient of linear expansion of the composite material isgreater than the average coefficient of linear expansion, which is5.9×10⁻⁶/K, of a gallium—arsenic compound semiconductor that forms thebase material of the semiconductor laser element, and therefore, when asemiconductor laser element is heated and joined to the top of the heatsink material, thermal stress is caused, making it easy for thesemiconductor laser element to come off, and as a result, the lifetimeof the laser element and its reliability over a long period of time arenegatively affected.

It is preferable for a main surface of the heat sink material accordingto this invention to have at least a metal film formed thereon, andconcretely, it is preferable for the two main surfaces, the uppersurface on which a semiconductor laser element is mounted and the lowersurface, to have a metal film formed thereon.

The semiconductor laser device according to one embodiment of thisinvention is provided with a heat sink material having any of the abovedescribed characteristics and a semiconductor laser element chip, whichis secured to the top of the main surface of this heat sink material.The end surface of the semiconductor laser element chip is positioned onthe main surface at a distance of no greater than 10 μm from an edge ofthe heat sink material where the main surface and a secondary surfacecross. Concretely, the semiconductor laser element chip is secured tothe top of the main surface of the heat sink material by means ofsoldering in such a manner that an edge of a long side of thesemiconductor laser element (laser diode (LD)) chip is positioned at adistance of no greater than 10 μm from an edge on one plane of the heatsink material having a large area. It is more preferable for the abovedescribed distance to be no greater than 5 μm, and it is most preferablefor it to be no greater than 3 μm. In the case where the above describeddistance exceeds 10 μm, the path of the laser beam that is emitted fromthe semiconductor laser element chip with a certain range of spread isinterfered with by the edge of the heat sink material, and the laserbeam is disturbed.

EXAMPLES

Heat sink materials are fabricated by processing a variety of materialsunder the conditions for a cutting process shown in Table 1.

The composition of the “material” in Table 1 is as follows.

Cu—W alloy 1: alloy including 11 mass % of copper and 89 mass % oftungsten

-   -   Cu—W alloy 2: alloy including 11 mass % of copper and 89 mass %        of tungsten    -   Cu—W alloy 3: alloy including 20 mass % of copper and 80 mass %        of tungsten    -   Cu—Diamond: composite material of copper—diamond particles        including 46 mass % of copper    -   Al—SiC: composite material of aluminum—silicon carbide particles        including 30 mass % of aluminum    -   Cu: pure copper    -   The Cu—W alloys (Cu—W alloy 1 having a thermal conductivity of        180 W/m·K and a coefficient of linear expansion of 6.5×10⁻⁶/K,        Cu—W alloy 2 having a thermal conductivity of 210 W/m·K and a        coefficient of linear expansion of 6.5×10⁻⁶/K, and Cu—W alloy 3        having a thermal conductivity of 200 W/m·K and a coefficient of        linear expansion of 8.3×10⁻⁶/K) were manufactured as follows.

A tungsten powder having an average particle diameter of 5 μm and alubricant (paraffin based) were mixed. This mixed powder was moldedunder a press with a pressure of 2 t/cm², and a pressed powder body inrectangular parallelepiped form having dimensions of 42 mm×42 mm×1 mmwas fabricated. A binder removing process was carried out on thispressed powder body in a hydrogen atmosphere for five hours at atemperature of 800° C. After that, the pressed powder body was sinteredin a hydrogen atmosphere for two hours at a temperature of 1300° C. Acopper powder having a purity of 99.9% was placed beneath the gainedtungsten porous sintered body, and the copper was melted in this statein a hydrogen atmosphere for two hours at a temperature of 1250° C. sothat the copper was infiltrated into the pores of the tungsten poroussintered body, and thereby, a copper—tungsten sintered body wasfabricated. A mechanical process was carried out on the gainedcopper—tungsten sintered body so that it became a rectangularparallelepiped having dimensions of 38 mm×38 mm×0.3 mm.

Here, it is possible to manufacture a copper—tungsten sintered body bymixing and sintering a copper powder and a tungsten powder.

The Cu—Diamond composite material (having a thermal conductivity of 550W/m·K and a coefficient of linear expansion of 6.0×10⁻⁶/K) wasmanufactured as follows.

A commercially available diamond powder having a grain diameter of 75 μmto 95 μm and a copper powder having a purity of 99% and a grain diameterof less than 15 μm were mixed at a mass ratio of 54:46. A metalcontainer made of molybdenum was filled in with this mixed powder, andpress molding was carried out with a pressure of 2 t/cm² so that apressed powder body in columnar form having dimensions of 50 mm, whichwas the diameter, ×7 mm, which was the thickness, was fabricated. Afterthat, this metal container was put into a belt type ultrahigh pressuregenerating unit and maintained for five minutes under the conditionswhere the pressure was 5 GPa and the temperature was 1100° C., andthereby, a copper—diamond sintered body was fabricated. A cuttingprocess was carried out on the gained copper—diamond sintered body sothat it became a rectangular parallelepiped having dimensions of 38mm×38 mm×0.3 mm.

The Al—SiC composite material was manufactured as follows.

An aluminum powder having an average particle diameter of 25 μm and asilicon carbide powder having an average particle diameter of 50 μm wereadded together so that the silicon carbide powder became 65 mass %, andwere mixed for an hour using a kneader. Press molding was carried out onthis mixed powder with a pressure of 5 t/cm², and a pressed powder bodyin rectangular parallelepiped form having dimensions of 40 mm×40 mm×1 mmwas fabricated. This pressed powder body was sintered in a nitrogenatmosphere for two hours at a temperature of 700° C., and thereby, analuminum—silicon carbide composite sintered body was fabricated. Amachine process was carried out on the gained aluminum—silicon carbidecomposite sintered body so that it became a rectangular parallelepipedhaving dimensions of 38 mm×38 mm×0.3 mm.

The “conditions for cutting process” in Table 1 are as follows.

(Discharging Process 1)

As shown in FIG. 1(A), a material 100 having dimensions of X=38 mm, Y=38mm and Z=0.3 mm was prepared. The upper and lower surfaces wereprocessed by means of lapping so that the thickness (Z) became 0.3 mm.After that, as shown in FIG. 1(B), a discharge wire 200 was placedapproximately parallel to the main surface of the material 100 having arelatively large area, and thus, a discharging process was carried outon the secondary surface having a relatively small area. Concretely, thedischarge wire 200 having a diameter of 0.2 mm was moved in thedirection indicated by an arrow, and thereby, a cutting process wascarried out on the material 100. In this case, as shown in FIG. 2, thedischarge wire 200 was passed through a slit 420 in a state where thematerial 100 was pinched by a jig 400, which was secured by screws, andthus, the material 100 was cut in accordance with the dischargingprocess. When cutting was completed in one slit 420, the discharge wire200 was automatically cut and moved to an adjacent slit 420, where thewire was automatically connected and the material 100 was sequentiallycut in accordance with the discharging process. At this time, as shownin FIG. 1(C), the cutting process was carried out by reciprocating thedischarge wire 200 once relative to the material 100. The dischargingprocess conditions at this time were a voltage of 45 V, a current of 5 Aand a moving speed of the discharge wire of 1.0 mm/min. In this manner,as shown in FIG. 1(F), materials 50 cut at equal intervals in onedirection were gained. After that, the jig 400 in FIG. 2 was rotated by90°, and thereby, the materials 50 cut at equal intervals in onedirection were rotated by 90°, and then, as shown in FIG. 1(G), thedischarge wire 200 was placed approximately parallel to the main surfaceof the materials 50 having a relatively large area, and a dischargingprocess was carried out on the secondary surfaces having a relativelysmall area. At this time, a cutting process was carried out in the samemanner as that shown in FIG. 1(C) by reciprocating the discharge wire200 once relative to the materials 50. As a result, the materials wereconverted to chips as shown in FIG. 1(H), and thus, heat sink materials10 were gained. As shown in FIG. 1(I), the heat sink material 10 haddimensions of x=10 mm, y=2 mm and z=0.3 mm.

(Discharging Process 2)

As shown in FIG. 1(A), the material 100 having dimensions of X=38 mm,Y=38 mm and Z=0.3 mm was prepared. The upper and lower surfaces wereprocessed by means of lapping so that the thickness (Z) became 0.3 mm.After that, as shown in FIG. 1(B), the discharge wire 200 was placedapproximately parallel to the main surface of the material 100 having arelatively large area, and thus, a discharging process was carried outon the secondary surface having a relatively small area. Concretely, thedischarge wire 200 having a diameter of 0.2 mm was moved in thedirection indicated by the arrow, and thereby, a cutting process wascarried out on the material 100. In this case, as shown in FIG. 2, thedischarge wire 200 was passed through the slit 420 in a state where thematerial 100 was pinched by the jig 400, which was secured by screws,and thus, the material 100 was cut in accordance with the dischargingprocess. When cutting was completed in one slit 420, the discharge wire200 was automatically cut and moved to an adjacent slit 420, where thewire was automatically connected and the material 100 was sequentiallycut in accordance with the discharging process. At this time, as shownin FIG. 1(D), the cutting process was carried out on the material 100,and a process for roughly finishing the cut surfaces that had beengained through this cutting process was carried out by reciprocating thedischarge wire 200 twice relative to the material 100. The dischargingprocess conditions at this time were a voltage of 45 V, a current of 5 Aand a moving speed of the discharge wire of 1.0 mm/min for the cuttingprocess, and a voltage of 60 V, a current of 0.5 A and a moving speed ofthe discharge wire of 1.0 mm/min for the roughly finishing process. Theamount of offset in the roughly finishing process was 0.122 mm. In thismanner, as shown in FIG. 1(F), materials 50 cut at equal intervals inone direction were gained. After that, the jig 400 in FIG. 2 was rotatedby 90°, and thereby, the materials 50 cut at equal intervals in onedirection were rotated by 90°, and then, as shown in FIG. 1(G), thedischarge wire 200 was placed approximately parallel to the main surfaceof the materials 50 having a relatively large area, and a dischargingprocess was carried out on the secondary surfaces having a relativelysmall area. At this time, a cutting process was carried out on thematerials 50, and the process for roughly finishing the cut surfacesthat had been gained through this cutting process was carried out in thesame manner as that shown in FIG. 1(D) by reciprocating the dischargewire 200 twice relative to the materials 50. As a result, the materialswere converted to chips as shown in FIG. 1(H), and thus, the heat sinkmaterials 10 were gained. As shown in FIG. 1(I), the heat sink material10 had dimensions of x=10 mm, y=2 mm and z=0.3 mm.

(Discharging Process 3)

As shown in FIG. 1(A), the material 100 having dimensions of X=38 mm,Y=38 mm and Z=0.3 mm was prepared. The upper and lower surfaces of thematerials which were a Cu—W alloy were processed by means of lapping sothat the thickness (Z) became 0.3 mm. A polishing process was carriedout on the upper and lower surfaces of the materials which wereCu—Diamond and Al—SiC using a plane grinder so that the thickness (Z)became 0.3 mm. After that, as shown in FIG. 1(B), the discharge wire 200was placed approximately parallel to the main surface of the material100 having a relatively large area, and thus, a discharging process wascarried out on the secondary surface having a relatively small area.Concretely, the discharge wire 200 having a diameter of 0.2 mm was movedin the direction indicated by the arrow, and thereby, a cutting processwas carried out on the material 100. In this case, as shown in FIG. 2,the discharge wire 200 was passed through the slit 420 in a state wherethe material 100 was pinched by the jig 400, which was secured byscrews, and thus, the material 100 was cut in accordance with thedischarging process. When cutting was completed in one slit 420, thedischarge wire 200 was automatically cut and moved to an adjacent slit420, where the wire was automatically connected and the material 100 wassequentially cut in accordance with the discharging process. At thistime, as shown in FIG. 1(E), the cutting process was carried out on thematerial 100, a process for roughly finishing the cut surfaces that hadbeen gained through this cutting process was carried out, and a processfor finely finishing the cut surfaces was carried out by reciprocatingthe discharge wire 200 three times relative to the material 100. Thedischarging process conditions at this time were a voltage of 45 V, acurrent of 5 A and a moving speed of the discharge wire of 1.0 mm/minfor the cutting process, a voltage of 60 V, a current of 0.5 A and amoving speed of the discharge wire of 3.5 mm/min for the roughlyfinishing process, and a voltage of 10 V, a current of 5 A and a movingspeed of the discharge wire of 5.5 mm/min for the finely finishingprocess. The amounts of offset in the roughly finishing process and inthe finely finishing process were 0.122 mm and 0.110 mm, respectively.In this manner, as shown in FIG. 1(F), materials 50 cut at equalintervals in one direction were gained. After that, the jig 400 in FIG.2 was rotated by 90°, and thereby, the materials 50 cut at equalintervals in one direction were rotated by 90°, and then, as shown inFIG. 1(G), the discharge wire 200 was placed approximately parallel tothe main surface of the materials 50 having a relatively large area, andthe discharging process was carried out on the secondary surfaces havinga relatively small area. At this time, the cutting process was carriedout on the materials 50, the process for roughly finishing the cutsurfaces that had been gained through this cutting process was carriedout, and the process for finely finishing the cut surfaces was carriedout in the same manner as that shown in FIG. 1(E) by reciprocating thedischarge wire 200 three times relative to the materials 50. As aresult, the materials were converted to chips as shown in FIG. 1(H), andthus, the heat sink materials 10 were gained. As shown in FIG. 1(I), theheat sink material 10 had dimensions of x=10 mm, y=2 mm and z=0.3 mm.

(Discharging Process 4)

As shown in FIG. 1(A), the material 100 having dimensions of X=38 mm,Y=38 mm and Z=0.3 mm was prepared. The upper and lower surfaces wereprocessed by means of lapping so that the thickness (Z) became 0.3 mm.After that, as shown in FIG. 1(B), the discharge wire 200 was placedapproximately parallel to the main surface of the material 100 having arelatively large area, and thus, a discharging process was carried outon the secondary surface having a relatively small area. Concretely, thedischarge wire 200 having a diameter of 0.2 mm was moved in thedirection indicated by the arrow, and thereby, a cutting process wascarried out on the material 100. In this case, as shown in FIG. 2, thedischarge wire 200 was passed through the slit 420 in a state where thematerial 100 was pinched by the jig 400, which was secured by screws,and thus, the material 100 was cut in accordance with the dischargingprocess. When cutting was completed in one slit 420, the discharge wire200 was automatically cut and moved to an adjacent slit 420, where thewire was automatically connected and the material 100 was sequentiallycut in accordance with the discharging process. At this time, as shownin FIG. 1(E), the cutting process was carried out on the material 100, aprocess for roughly finishing the cut surfaces that had been gainedthrough this cutting process was carried out, and a process for finelyfinishing the cut surfaces was carried out by reciprocating thedischarge wire 200 three times relative to the material 100. Thedischarging process conditions at this time were a voltage of 90 V, acurrent of 10 A and a moving speed of the discharge wire of 2.0 mm/minfor the cutting process, a voltage of 120 V, a current of 2 A and amoving speed of the discharge wire of 6 mm/min for the roughly finishingprocess, and a voltage of 20 V, a current of 10 A and a moving speed ofthe discharge wire of 10 mm/min for the finely finishing process. Theamounts of offset in the roughly finishing process and in the finelyfinishing process were 0.122 mm and 0.110 mm, respectively. In thismanner, as shown in FIG. 1(F), materials 50 cut at equal intervals inone direction were gained. After that, the jig 400 in FIG. 2 was rotatedby 90°, and thereby, the materials 50 cut at equal intervals in onedirection were rotated by 90°, and then, as shown in FIG. 1(G), thedischarge wire 200 was placed approximately parallel to the main surfaceof the materials 50 having a relatively large area, and the dischargingprocess was carried out on secondary surfaces having a relatively smallarea. At this time, the cutting process was carried out on the materials50, the process for roughly finishing the cut surfaces that had beengained through this cutting process was carried out, and the process forfinely finishing the cut surfaces was carried out in the same manner asthat shown in FIG. 1(E) by reciprocating the discharge wire 200 threetimes relative to the materials 50. As a result, the materials wereconverted to chips as shown in FIG. 1(H), and thus, the heat sinkmaterials 10 were gained. As shown in FIG. 1(I), the heat sink material10 had dimensions of x=10 mm, y=2 mm and z=0.3 mm.

(Discharging Process 5)

As shown in FIG. 1(A), the material 100 having dimensions of X=38 mm,Y=38 mm and Z=0.3 mm was prepared. The upper and lower surfaces wereprocessed by means of lapping so that the thickness (Z) became 0.3 mm.After that, as shown in FIG. 1(B), the discharge wire 200 was placedapproximately parallel to the main surface of the material 100 having arelatively large area, and thus, a discharging process was carried outon the secondary surface having a relatively small area. Concretely, thedischarge wire 200 having a diameter of 0.2 mm was moved in thedirection indicated by the arrow, and thereby, a cutting process wascarried out on the material 100. In this case, as shown in FIG. 2, thedischarge wire 200 was passed through the slit 420 in a state where thematerial 100 was pinched by the jig 400, which was secured by screws,and thus, the material 100 was cut in accordance with the dischargingprocess. When cutting was completed in one slit 420, the discharge wire200 was automatically cut and moved to an adjacent slit 420, where thewire was automatically connected and the material 100 was sequentiallycut in accordance with the discharging process. At this time, as shownin FIG. 1(E), the cutting process was carried out on the material 100, aprocess for roughly finishing the cut surfaces that had been gainedthrough this cutting process was carried out, and a process for finelyfinishing the cut surfaces was carried out by reciprocating thedischarge wire 200 three times relative to the material 100. Thedischarging process conditions at this time were a voltage of 45 V, acurrent of 5 A and a moving speed of the discharge wire of 1.0 mm/minfor the cutting process, a voltage of 60 V, a current of 0.5 A and amoving speed of the discharge wire of 1.0 mm/min for the roughlyfinishing process, and a voltage of 30 V, a current of 20 A and a movingspeed of the discharge wire of 15 mm/min for the finely finishingprocess. The amounts of offset in the roughly finishing process and inthe finely finishing process were 0.122 mm and 0.110 mm, respectively.In this manner, as shown in FIG. 1(F), materials 50 cut at equalintervals in one direction were gained. After that, the jig 400 in FIG.2 was rotated by 90°, and thereby, the materials 50 cut at equalintervals in one direction were rotated by 90°, and then, as shown inFIG. 1(G), the discharge wire 200 was placed approximately parallel tothe main surface of the materials 50 having a relatively large area, andthe discharging process was carried out on the secondary surfaces havinga relatively small area. At this time, the cutting process was carriedout on the materials 50, the process for roughly finishing the cutsurfaces that had been gained through this cutting process was carriedout, and the process for finely finishing the cut surfaces was carriedout in the same manner as that shown in FIG. 1(E) by reciprocating thedischarge wire 200 three times relative to the materials 50. As aresult, the materials were converted to chips as shown in FIG. 1(H), andthus, the heat sink materials 10 were gained. As shown in FIG. 1(I), theheat sink material 10 had dimensions of x=10 mm, y=2 mm and z=0.3 mm.

(Discharging Process 6)

As shown in FIG. 5(A), the material 100 having dimensions of X=38 mm,Y=38 mm and Z=0.3 mm was prepared. The upper and lower surfaces wereprocessed by means of lapping so that the thickness (Z) became 0.3 mm.After that, as shown in FIG. 5(A), the discharge wire 200 was placedapproximately perpendicular to the main surface of the material 100having a relatively large area, and thus, a discharging process wascarried out on the secondary surface having a relatively small area.Concretely, as shown in FIG. 5(B), the discharge wire 200 having adiameter of 0.2 mm was moved in the direction indicated by the arrow,and thereby, a cutting process was carried out on the material 100. Thedischarging process conditions at this time were a voltage of 45 V, acurrent of 10 A and a moving speed of the discharge wire of 3.0 mm/minfor the cutting process. In this manner, the materials were convertedinto chips as shown in FIG. 5(C), and thus, the heat sink material 10was gained. As shown in FIG. 5(C), the cross section of the heat sinkmaterial 10 had dimensions of x=10 mm and y=2 mm, and a protrusion 10 aremained after being cut off.

Due to this protrusion, a semiconductor laser element chip could not bemounted on the heat sink material 10 in Comparison Example 2.

(Dicing Process)

As shown in FIG. 4(A), the material 100 having dimensions of X=38 mm,Y=38 mm and Z=0.3 mm was prepared. The upper and lower surfaces wereprocessed by means of lapping so that the thickness (Z) became 0.3 mm.After that, as shown in FIG. 4(A), a cutting process was carried out byplacing a rotary grinder or a dicing blade (diamond blade) 300approximately perpendicular to the main surface of the material 100having a relatively large area. In this manner, as shown in FIG. 4(B),materials 50 cut in one direction at equal intervals were gained. Afterthat, the materials 50 cut in one direction at equal intervals wererotated by 90° and, as shown in FIG. 4(C), a cutting process was carriedout by placing the rotary grinder or the dicing blade 300 approximatelyperpendicular to the main surface of the materials 50 having arelatively large area. In this manner, the materials were converted tochips, as shown in FIG. 4(D), and thus, the heat sink material 10 wasgained. The gained heat sink material 10 was mounted in a barrel pot soas to be mixed with a dummy powder or stones, and barrel polishing wascarried out, and thereby, burrs on the cut surfaces were removed. Asshown in FIG. 4(E), the heat sink material 10 has dimensions of x=10 mm,y=2 mm and z=0.3 mm.

In Comparative Example 3, the material made of a Cu—diamond compositematerial could not be cut in accordance with a dicing process. Inaddition, though the material made of a Cu—diamond composite materialwas attempted to be cut by means of a laser beam, diamond particleswhich exist on the edge portions on the cut surface were converted tographite, and when a nickel film was vapor deposited or a solder layerof a gold—tin alloy was formed in post processing, good adhesion couldnot be gained.

The form of the edge surface of the heat sink materials 10 gained fromthe respective samples as described above was observed and evaluated.The results (existence of burrs, degree of sagging, size and number ofchipped portions (chipping)) are shown in Table 1.

As shown in FIG. 3, a nickel (Ni) plating layer or a nickel vapordeposited layer 11 having a thickness of 1 μm was formed so as to coverthe main surfaces and secondary surfaces of the heat sink material 10fabricated from each sample, and after that, a platinum (Pt) film 12having a thickness of 0.2 μm was vapor deposited on this nickel platinglayer or nickel vapor deposited layer 11. Furthermore, a gold (Au) film13 having a thickness of 0.6 μm was vapor deposited on top of theplatinum film 12 on the main surface on the lower side and on thesecondary surfaces, which are sides continuing to this main surface onthe lower side. In addition, through vapor deposition, a solder layer 14was formed of a gold—tin (Au—Sn) alloy having a thickness of 3.0 μm onthe platinum film 12 and gold film 13 on the main surface on the upperside on which a semiconductor laser element chip was to be mounted andon the secondary surfaces which are sides continuing to this mainsurface on the upper side. In this manner, a heat sink 1 was fabricated.

After that, as shown in FIG. 6(A), the heat sink 1 is heated and joinedto the top of a base 3 made of copper, and a semiconductor laser elementchip for a bar laser 2 of which the base material is made of a galliumarsenic compound semiconductor material (coefficient of linearexpansion: 5.9×10⁻⁶/K) was mounted on top of the heat sink 1 via thesolder layer 14 through heating, joining and securing. At this time, asshown in FIG. 6(B), the semiconductor laser element chip 2 was mountedon top of the heat sink 1 so as to be aligned with the edge (edgeportion) of the heat sink 1. More concretely, the semiconductor laserelement chip 2 was mounted on top of the heat sink 1 in such a mannerthat the end surface of the light emitting layer (active layer) of thesemiconductor laser element chip 2 was positioned on top of the mainsurface at a distance of within 10 μm from the end of the heat sink 1where the main surface and the secondary surface cross. In this manner,a semiconductor laser device was formed.

As shown in FIG. 6(A), a hole 3 a for securing the base 3 of copper toanother member was provided. In FIGS. 6(A), 6(B) and 6(C), laser beamsare emitted in the direction indicated by arrows L. Portions from whicha laser beam is emitted 2 a are formed and aligned in the light emittinglayer of the semiconductor laser element chip 2 at intervals ofapproximately 100 μm pitch.

As shown in FIG. 6(C), in the case where a large chipped portion(chipping) 1 a exists on the end surface of the heat sink 1 directlybeneath the portion from which a laser beam is emitted 2 a, it becomesdifficult to release generated heat, and therefore, heat is preventedfrom being released from the semiconductor laser element chip 2 to theheat sink 1. In addition, as shown in FIG. 6(D), in the case where anapproximate radius of curvature (sagging from the end surface) 1 b inthe edge portion (edge) of the heat sink 1 where the main surface andthe secondary surface cross is great, heat is prevented from beingreleased from the portion directly beneath the laser emitting layer(active layer) to the heat sink 1. Furthermore, as shown in FIG. 6(E),in the case where there is a burr 1 c in the edge portion (edge) of theheat sink 1, that is to say, on the end surface, where the main surfaceand the secondary surface cross, there is a gap between thesemiconductor laser element chip 2 and the main surface of the heat sink1, and therefore, heat is prevented from being released from thesemiconductor laser element chip 2 to the heat sink 1.

The maximum output (W) of the laser beam of each sample and the timeover which this maximum output can be maintained, which is the lifetime,were measured under conditions of an applied current of 50 A and anapplied voltage of 4 V, using the gained semiconductor laser device. Theresult is shown in Table 1. TABLE 1 Form of end surface Conditions forcutting Chipping W Maximum output Lifetime Sample No. Material processExistence of burr Sagging R (μm) μm × L μm (number) (W) (time) Example 1Cu—W alloy 1 Discharging process 3 No 5  5 × 10 60 25000 (3) Example 2Cu—W alloy 1 Discharging process 4 No 10 15 × 30 50 25000 (5) Example 3Cu—W alloy 1 Discharging process 5 No 20 10 × 30 45 20000 (5) Example 4Cu—W alloy 2 Discharging process 3 No 5  5 × 10 60 25000 (3) Example 5Cu—W alloy 3 Discharging process 3 No 5  5 × 10 60 20000 (4) Example 6Cu-diamond Discharging process 3 No 20 30 × 40 80 25000 (8) Example 7Al—SiC Discharging process 3 No 5 20 × 30 40 25000 (8) Example 8 Cu—Walloy 1 Discharging process 1 Yes 45 45 × 30 30 15000 (15) Example 9Cu—W alloy 1 Discharging process 2 Yes 38 35 × 58 40 17000 (14)Comparative Cu—W alloy 1 Dicing process Yes 40  5 × 20 40 15000 Example1 (18) Comparative Cu—W alloy 1 Discharging process 6 Yes 40 40 × 55 — —Example 2 (—) Comparative Cu-diamond Dicing process — — — — — Example 3Comparative Cu Dicing process No 3  5 × 10 70 1000 Example 4 (2)

It can be seen from the results shown in Table 1 that in the case whereat least one of the heat sink materials according to Examples 1 to 9having an end surface gained by carrying out the discharging process onthe secondary surface using the discharge wire that is placedapproximately parallel to the main surface is used, the semiconductorlaser element chip can be mounted on top of the heat sink withoutcarrying out post processing, for example a polishing process forremoving burrs from the cut surface, and furthermore, an edge (edgeportion) having a small radius of curvature and small chipped portionscan be gained and burrs can be prevented from being created in the edgeportion in the heat sink materials according to Examples 1 to 7 bycarrying out the discharging process on the end surface. That is to say,the approximate radius of curvature (sagging R) can be made no greaterthan 30 μm in the edge portion (edge) of the heat sink material, wherethe main surface and the secondary surface cross, and the number ofchipped portions (chipping) having a width of no greater than 30 μm anda length of no greater than 50 μm per 1 mm on the length of the edge canbe made no greater than 10, and thus, burrs can be prevented from beingcreated in the edge portion. As a result, when a laser element ismounted on top of the heat sink material so that the end surface of thelaser emitting layer is aligned with the edge portion of the heat sinkmaterial, heat can be effectively released from the portion directlybeneath the laser emitting layer (active layer) to the heat sinkmaterial, and therefore, the maximum output of the laser beam can beincreased, and at the same time, the time over which this maximum outputcan be maintained, that is to say, the lifetime of the laser element,can be prolonged.

The embodiments and examples disclosed in the above are illustrative inall respects, and should not be considered as being limitative. Thescope of the present invention is defined not by the above describedembodiments and examples, but by the claims, and includes meaningsequivalent to the claims and all the modifications and variations withinthe scope.

INDUSTRIAL APPLICABILITY

According to this invention, a heat sink material having an end surfacewhich makes the formation of an edge portion on which at least a laserelement is mounted possible can be gained, and when a furtherdischarging process is carried out on this heat sink material, an edgeportion having a small radius of curvature and small chipped portionscan be gained, so that burrs are prevented from being created in theedge portion, and thus, heat release from the laser element to the heatsink material can be improved. Therefore, the heat sink materialaccording to this invention is appropriate for use as a heat sinkmaterial for a semiconductor laser element (laser diode (LD)) for a barlaser.

1. A heat sink material (10) made of an alloy or a composite materialincluding two or more types of elements, comprising a main surfacehaving a relatively large area and a secondary surface having arelatively small area which crosses said main surface, wherein saidsecondary surface includes a surface on which a discharging process hasbeen carried out using a discharge wire (200) that is placedapproximately parallel to said main surface.
 2. The heat sink material(10) according to claim 1, wherein an approximate radius of curvature atan edge where said main surface and said secondary surface cross is nogreater than 30 μm.
 3. The heat sink material (10) according to claim 2,wherein the number of chipped portions having a width of no greater than30 μm and a length of no greater than 50 μm, which exist per 1 mm on alength of the edge portion on said secondary surface, is no greater than10.
 4. The heat sink material (10) according to claim 1, wherein saidalloy or composite material has an average coefficient of linearexpansion at a temperature ranging from room temperature to 400° C. ofno less than 3.0×10⁻⁶/K and no greater than 9.0×10⁻⁶/K and a thermalconductivity of no less than 100 W/m·K.
 5. The heat sink material (10)according to claim 1, wherein a material that forms the heat sinkmaterial is a material including two types of metals or a materialincluding a metal and hard particles.
 6. The heat sink materialaccording to claim 5, wherein the material that forms the heat sinkmaterial (10) is one type of material selected from the group consistingof an alloy including copper and tungsten, a composite materialincluding diamond particles and copper, an alloy including copper andmolybdenum, and a composite material including silicon carbide andaluminum.
 7. The heat sink material (10) according to claim 1, wherein ametal film is formed at least on said main surface.
 8. A semiconductorlaser device, comprising: a heat sink material (1); and a semiconductorlaser element chip (2) that is secured to the top of a main surface ofsaid heat sink material (1), wherein said heat sink material (1) is madeof an alloy or a composite material including two or more types ofelements and comprises a main surface having a relatively large area,and a secondary surface having a relatively small area which crossessaid main surface, said secondary surface including a surface on which adischarging process has been carried out using a discharge wire (200)that is placed approximately parallel to said main surface, and an endsurface of said semiconductor laser element chip (2) is positioned onsaid main surface at a distance of no greater than 10 μm from an edgeportion where the main surface and the secondary surface of said heatsink material (1) cross.
 9. A manufacturing method for a heat sinkmaterial (10), comprising the steps of placing a discharge wire (200),on a material (100, 50) made of an alloy or a composite materialincluding two or more types of elements and having a main surface whichhas a relatively large area, and a secondary surface which has arelatively small area and crosses said main surface, to be approximatelyparallel to said main surface; and carrying out a discharging process onsaid material (100, 50) using said placed discharge wire (200).
 10. Themanufacturing method for the heat sink material (10) according to claim9, wherein said discharging process includes the steps of cutting thematerial, roughly finishing the cut surface, and finely finishing thecut surface.